Open AccessHfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing
Author(s) -
Md. Sherajul Islam,
Shahrukh Sadman,
A. S. M. Jannatul Islam,
Jeongwon Park
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5143939
Subject(s) - materials science , optoelectronics , negative impedance converter , transistor , transconductance , ferroelectricity , subthreshold slope , capacitance , gate dielectric , miniaturization , non volatile memory , field effect transistor , dielectric , lead zirconate titanate , high κ dielectric , nanotechnology , electrical engineering , electrode , chemistry , voltage , voltage source , engineering
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