Preparation, thermoelectric properties, and crystal structure of boron-doped Mg2Si single crystals
Author(s) -
K. Hayashi,
Wataru Saito,
Kazuya Sugimoto,
Kenji Ohoyama,
Kouichi Hayashi,
Naohisa Happo,
Masahide Harada,
Kenichi Oikawa,
Yasuhiro Inamura,
Yuzuru Miyazaki
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5143839
Subject(s) - materials science , doping , seebeck coefficient , thermoelectric effect , boron , vacancy defect , crystal (programming language) , thermoelectric materials , atom (system on chip) , single crystal , condensed matter physics , analytical chemistry (journal) , crystallography , optoelectronics , thermal conductivity , thermodynamics , chemistry , physics , composite material , organic chemistry , chromatography , computer science , embedded system , programming language
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