Open AccessRecent progress on the electronic structure, defect, and doping properties of Ga2O3
Author(s) -
Jiaye Zhang,
Jueli Shi,
Dongchen Qi,
Lang Chen,
Kelvin H. L. Zhang
Publication year - 2020
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5142999
Subject(s) - materials science , doping , band gap , semiconductor , passivation , optoelectronics , wide bandgap semiconductor , thin film , nanotechnology , photodetector , impurity , engineering physics , chemistry , layer (electronics) , organic chemistry , engineering
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