AlN grown by CBE for power device applications
Author(s) -
Guillaume Gommé,
Adrien Cutivet,
Boussairi Bouzazi,
Abderrahim Rahim Boucherif,
T.W. MacElwee,
Christophe Rodriguez,
Meriem Bouchilaoun,
Hubert Pelletier,
PhilippeOlivier Provost,
Hassan Maher,
Richard Arès
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5142615
Subject(s) - materials science , nitride , aluminium , molecular beam epitaxy , chemical beam epitaxy , thermal conductivity , optoelectronics , growth rate , epitaxy , ammonia , analytical chemistry (journal) , thermal , nanotechnology , composite material , chemistry , layer (electronics) , thermodynamics , geometry , mathematics , organic chemistry , physics , chromatography
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