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Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities
Author(s) -
Do Hee Lee,
Yeoseon Sim,
Jaewon Wang,
SoonYong Kwon
Publication year - 2020
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5142601
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , van der waals force , materials science , nanotechnology , nucleation , heterojunction , epitaxy , engineering physics , chemical physics , optoelectronics , chemistry , molecule , organic chemistry , layer (electronics) , physics
The last decade has witnessed significant progress in two-dimensional van der Waals (2D vdW) materials research; however, a number of challenges remain for their practical applications. The most significant challenge for 2D vdW materials is the control of the early stages of nucleation and growth of the material on preferred surfaces to eventually create large grains with digital thickness controllability, which will enable their incorporation into high-performance electronic and optoelectronic devices. This Perspective discusses the technical challenges to be overcome in the metal–organic chemical vapor deposition (MOCVD) growth of 2D group 6 transition metal dichalcogenide (TMD) atomic crystals and their heterostructures, as well as future research aspects in vdW epitaxy for 2D TMDs via MOCVD. In addition, we encourage the traditional MOCVD community to apply their expertise in the field of “2D vdW materials,” which will continue to grow at an exponential rate.

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