Open Access633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
Author(s) -
Daisuke Iida,
Zhe Zhuang,
Pavel Kirilenko,
Martin Velazquez-Rizo,
Mohammed A. Najmi,
Kazuhiro Ohkawa
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5142538
Subject(s) - light emitting diode , materials science , optoelectronics , residual stress , electroluminescence , wide bandgap semiconductor , diode , stress (linguistics) , layer (electronics) , quantum efficiency , optics , composite material , linguistics , philosophy , physics
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