Open AccessFull bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
Author(s) -
Hemant Ghadi,
Joe F. McGlone,
Christine M. Jackson,
Esmat Farzana,
Zixuan Feng,
A F M Anhar Uddin Bhuiyan,
Hongping Zhao,
Aaron R. Arehart,
Steven A. Ringel
Publication year - 2020
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5142313
Subject(s) - metalorganic vapour phase epitaxy , deep level transient spectroscopy , chemical vapor deposition , materials science , band gap , analytical chemistry (journal) , molecular beam epitaxy , spectroscopy , epitaxy , optoelectronics , chemistry , nanotechnology , silicon , physics , layer (electronics) , chromatography , quantum mechanics
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