High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials | Zendy

L. Kończewicz | Zendy; Sandrine Juillaguet | Zendy; E. LitwinStaszewska | Zendy; R. Piotrzkowski | Zendy; Hervé Peyre | Zendy; Samuel Matta | Zendy; Mohamed Al Khalfioui | Zendy; M. Leroux | Zendy; B. Damilano | Zendy; J. Brault | Zendy; Sylvie Contreras | Zendy

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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Author(s) -

L. Kończewicz,

Sandrine Juillaguet,

E. LitwinStaszewska,

R. Piotrzkowski,

Hervé Peyre,

Samuel Matta,

Mohamed Al Khalfioui,

M. Leroux,

B. Damilano,

J. Brault,

Sylvie Contreras

Publication year - 2020

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.5140561

Subject(s) - materials science , molecular beam epitaxy , sapphire , impurity , electrical resistivity and conductivity , doping , hall effect , annealing (glass) , activation energy , epitaxy , thermal conduction , analytical chemistry (journal) , condensed matter physics , optoelectronics , chemistry , nanotechnology , metallurgy , optics , laser , electrical engineering , layer (electronics) , chromatography , composite material , physics , organic chemistry , engineering

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