Polymer–perovskite blend light-emitting diodes using a self-compensated heavily doped polymeric anode
Author(s) -
Antonio Gaetano Ricciardulli,
Bas van der Zee,
Kai Philipps,
GertJan A. H. Wetzelaer,
RuiQi Png,
Peter K. H. Ho,
LayLay Chua,
Paul W. M. Blom
Publication year - 2020
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5140519
Subject(s) - materials science , pedot:pss , perovskite (structure) , anode , polystyrene sulfonate , optoelectronics , doping , diode , electroluminescence , polymer , light emitting diode , chemical engineering , composite material , electrode , layer (electronics) , chemistry , engineering
Perovskite-based light-emitting diodes (PeLEDs) are drawing great attention due to their remarkable performance and ease of processing. Nevertheless, a critical aspect is the perovskite film formation on top of solution-processed anodes such as poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). Use of conventional PEDOT:PSS anodes gives rise to high leakage currents that mask the hole transport properties of the perovskite semiconductor. Here, we show a feasible approach to overcome this constraint by implementing a solution-processed, self-compensated, hole-doped triarylamine-fluorene copolymer (p-pTFF-C2F5SIS) with a work function of 5.85 eV as the anode for polymer–perovskite blend LED devices. Highly efficient hole injection was obtained, near that of evaporated MoOx. Hole-only devices reveal that the hole transport in the polymer–perovskite blend is trap-limited. PeLEDs with the ultrahigh-workfunction p-pTFF-C2F5SIS anode show much lower leakage and much better stability in current-voltage and light output characteristics than those with the PEDOT:PSSH anode.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom