Open AccessBoron influence on bandgap and photoluminescence in BGaN grown on AlN
Author(s) -
Ewelina Zdanowicz,
Daisuke Iida,
Ł. Pawlaczyk,
J. Serafińczuk,
R. Szukiewicz,
R. Kudrawiec,
D. Hommel,
Kazuhiro Ohkawa
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5140413
Subject(s) - photoluminescence , band gap , materials science , optoelectronics , sapphire , wide bandgap semiconductor , metalorganic vapour phase epitaxy , boron , epitaxy , molecular beam epitaxy , semiconductor , analytical chemistry (journal) , laser , optics , nanotechnology , chemistry , layer (electronics) , physics , organic chemistry , chromatography
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