Open AccessOptical and recombination properties of dislocations in cast-mono silicon from short wave infrared luminescence imaging
Author(s) -
Daniel S. Ory,
Thibaud Hildebrandt,
Laurent Lombez
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5140245
Subject(s) - silicon , luminescence , materials science , dislocation , recombination , tilt (camera) , wavelength , carrier lifetime , absorption (acoustics) , infrared , molecular physics , photoluminescence , optoelectronics , optics , condensed matter physics , chemistry , physics , mechanical engineering , biochemistry , engineering , composite material , gene
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