Open AccessEffect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism
Author(s) -
В.А. Тимофеев,
V. I. Mashanov,
А. И. Никифоров,
I. V. Skvortsov,
Tatyana A. Gavrilova,
D. V. Gulyaev,
А. К. Гутаковский,
I.A. Chetyrin
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5139936
Subject(s) - tin , materials science , photoluminescence , silicon , x ray photoelectron spectroscopy , nanostructure , molecular beam epitaxy , crystal (programming language) , dislocation , epitaxy , crystallography , optoelectronics , nanotechnology , chemical engineering , metallurgy , composite material , chemistry , layer (electronics) , computer science , engineering , programming language
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