Open AccessBand structure, effective mass, and carrier mobility of few-layer h-AlN under layer and strain engineering
Author(s) -
Yao Cai,
Yan Liu,
Ying Xie,
Yang Zou,
Chao Gao,
Yan Zhao,
Sheng Liu,
Hongxing Xu,
Jian Shi,
Shishang Guo,
Chengliang Sun
Publication year - 2020
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5139664
Subject(s) - materials science , band gap , electron mobility , effective mass (spring–mass system) , monolayer , strain engineering , semiconductor , direct and indirect band gaps , heterojunction , layer (electronics) , isotropy , optoelectronics , zigzag , phosphorene , condensed matter physics , wide bandgap semiconductor , nanotechnology , optics , silicon , physics , quantum mechanics , geometry , mathematics
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