Studying the interface between croconic acid thin films and substrates using a slow positron beam | Zendy

D. E. Peterson | Zendy; Jing Liu | Zendy; Francisco Guzmán | Zendy; Jonas Etzweiler | Zendy; Gabriel Santoyo | Zendy; Sean Murphy | Zendy; Sara J. Callori | Zendy; Kimberley Cousins | Zendy; Timothy Usher | Zendy; Renwu Zhang | Zendy

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Studying the interface between croconic acid thin films and substrates using a slow positron beam

Author(s) -

D. E. Peterson,

Jing Liu,

Francisco Guzmán,

Jonas Etzweiler,

Gabriel Santoyo,

Sean Murphy,

Sara J. Callori,

Kimberley Cousins,

Timothy Usher,

Renwu Zhang

Publication year - 2019

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.5135865

Subject(s) - void (composites) , ferroelectricity , materials science , thin film , positron , electric field , optoelectronics , impurity , substrate (aquarium) , spectroscopy , surface energy , nanotechnology , electron , composite material , chemistry , dielectric , physics , oceanography , organic chemistry , quantum mechanics , geology

Croconic acid (CA) is the first organic ferroelectric with a spontaneous polarity in bulk samples comparable to its inorganic counterparts. As a natural extension of study, ultrathin CA films (∼nm scale) were investigated to reveal ferroelectric effects in films on different substrates for their fundamental and industrial significance. However, the void defect at the interface between the film and substrate is presumed to interfere with surface effects. In this work, a non- invasive technique, a slow positron beam, coupled with Doppler broadening energy spectroscopy (DBES), is applied to study the void defects within the interfacial layer between CA films and Si and SiO2 substrates. The effect of external electric field on defect formation is also investigated and an underlying mechanism is proposed.Croconic acid (CA) is the first organic ferroelectric with a spontaneous polarity in bulk samples comparable to its inorganic counterparts. As a natural extension of study, ultrathin CA films (∼nm scale) were investigated to reveal ferroelectric effects in films on different substrates for their fundamental and industrial significance. However, the void defect at the interface between the film and substrate is presumed to interfere with surface effects. In this work, a non- invasive technique, a slow positron beam, coupled with Doppler broadening energy spectroscopy (DBES), is applied to study the void defects within the interfacial layer between CA films and Si and SiO2 substrates. The effect of external electric field on defect formation is also investigated and an underlying mechanism is proposed.

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