Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces | Zendy

T. Umeda | Zendy; Y. Nakano | Zendy; Eito Higa | Zendy; Takafumi Okuda | Zendy; Tsunenobu Kimoto | Zendy; Takuji Hosoi | Zendy; Heiji Watanabe | Zendy; Mitsuru Sometani | Zendy; Shinsuke Harada | Zendy

Open Access

Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces

Author(s) -

T. Umeda,

Y. Nakano,

Eito Higa,

Takafumi Okuda,

Tsunenobu Kimoto,

Takuji Hosoi,

Heiji Watanabe,

Mitsuru Sometani,

Shinsuke Harada

Publication year - 2020

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.5134648

Subject(s) - electron paramagnetic resonance , materials science , hyperfine structure , dangling bond , doping , passivation , condensed matter physics , chemistry , nuclear magnetic resonance , molecular physics , atomic physics , silicon , optoelectronics , nanotechnology , physics , layer (electronics)

We characterized an intrinsic interface defect, called the “PbC center,” formed at 4H-SiC(0001)/SiO2 interfaces by means of electron-spin-resonance (ESR) and electrically detected-magnetic-resonanc...

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