Open AccessProbing the dopant profile in nanoscale devices by low temperature electrostatic force microscopy
Author(s) -
Wanqing Wang,
Fan Zhao,
Kaixiang Chen,
Hao Wei,
Yaping Dan
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5133095
Subject(s) - dopant , materials science , nanoscopic scale , electrostatic force microscope , photocurrent , doping , microscopy , kelvin probe force microscope , optoelectronics , phase (matter) , scanning probe microscopy , boron , bipolar junction transistor , transistor , nanotechnology , atomic force microscopy , optics , voltage , chemistry , electrical engineering , physics , organic chemistry , engineering
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