Open AccessLow temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
Author(s) -
Fikadu Alema,
Yuewei Zhang,
A. Osinsky,
Nicholas Valente,
Akhil Mauze,
Takeki Itoh,
James S. Speck
Publication year - 2019
Publication title -
apl materials
Language(s) - Slovenian
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5132954
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , electron mobility , materials science , analytical chemistry (journal) , epitaxy , hall effect , doping , thin film , electrical resistivity and conductivity , optoelectronics , nanotechnology , chemistry , chromatography , engineering , electrical engineering , layer (electronics)
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