Open AccessEffects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process
Author(s) -
Cheol-Min Lim,
Ziqiang Zhao,
Kei Sumita,
Kasidit Toprasertpong,
Mitsuru Takenaka,
Shinichi Takagi
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5132881
Subject(s) - materials science , annealing (glass) , wafer , optoelectronics , electron mobility , ion implantation , mosfet , crystallinity , doping , fabrication , hydrogen , transistor , oxide , ion , electrical engineering , composite material , chemistry , metallurgy , voltage , medicine , alternative medicine , organic chemistry , pathology , engineering
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