z-logo
open-access-imgOpen Access
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
Author(s) -
Giuseppe Fisicaro,
Corrado Bongiorno,
Ioannis Deretzis,
Filippo Giannazzo,
Francesco La Via,
Fabrizio Roccaforte,
Marcin Zieliński,
Massimo Zimbone,
Antonino La Magna
Publication year - 2020
Publication title -
applied physics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.084
H-Index - 66
ISSN - 1931-9401
DOI - 10.1063/1.5132300
Subject(s) - materials science , kinetic monte carlo , substrate (aquarium) , semiconductor , transistor , optoelectronics , silicon , condensed matter physics , stacking , epitaxy , grain boundary , semiconductor device , stacking fault , nanotechnology , engineering physics , voltage , monte carlo method , dislocation , electrical engineering , chemistry , layer (electronics) , microstructure , physics , composite material , mathematics , oceanography , engineering , metallurgy , statistics , organic chemistry , geology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom