The influence of edge structure on the optoelectronic properties of Si2BN quantum dot | Zendy

H.R. Mahida | Zendy; Deobrat Singh | Zendy; Yogesh Sonvane | Zendy; P. B. Thakor | Zendy; Rajeev Ahuja | Zendy; Sanjeev K. Gupta | Zendy

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The influence of edge structure on the optoelectronic properties of Si2BN quantum dot

Author(s) -

H.R. Mahida,

Deobrat Singh,

Yogesh Sonvane,

P. B. Thakor,

Rajeev Ahuja,

Sanjeev K. Gupta

Publication year - 2019

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.5131149

Subject(s) - quantum dot , materials science , electronic structure , fermi level , molar absorptivity , density functional theory , hydrogen , electric field , molecular physics , optoelectronics , atomic physics , electron , chemistry , computational chemistry , optics , physics , organic chemistry , quantum mechanics

In recent work, we have investigated the electronic and optical properties of pristine and functionalized Si2BN quantum dots (QDs) using first-principles calculations. Due to the edge functionaliza ...

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