Highly (001) oriented MnAl thin film fabricated on CoGa buffer layer

5 nm- and 15 nm-thick (001) oriented MnAl films were fabricated on CoGa buffer layers with various thermal treatments. The insertion of the CoGa layer was effective to obtain the square out-of-plane hysteresis loop even in the MnAl thickness of 5 nm. Highly (001) oriented MnAl film was obtained by depositing Mn and Al on CoGa at a substrate temperature of 200°C followed by annealing at 500°C. The perpendicular magnetic anisotropy was estimated to be 7.4±0.2 and 8.5±0.4 Merg/cc for 5 nm- and 15 nm-thick MnAl, respectively. Lower anisotropy in 5 nm-thick MnAl may be due to the interdiffusion between the MnAl and CoGa layers.5 nm- and 15 nm-thick (001) oriented MnAl films were fabricated on CoGa buffer layers with various thermal treatments. The insertion of the CoGa layer was effective to obtain the square out-of-plane hysteresis loop even in the MnAl thickness of 5 nm. Highly (001) oriented MnAl film was obtained by depositing Mn and Al on CoGa at a substrate temperature of 200°C followed by annealing at 500°C. The perpendicular magnetic anisotropy was estimated to be 7.4±0.2 and 8.5±0.4 Merg/cc for 5 nm- and 15 nm-thick MnAl, respectively. Lower anisotropy in 5 nm-thick MnAl may be due to the interdiffusion between the MnAl and CoGa layers.