Open AccessPublisher's Note: “Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors” [Appl. Phys. Lett. 115, 111101 (2019)]
Author(s) -
Jiandong Sun,
Zhipeng Zhang,
Xiang Li,
Hua Qin,
Yunfei Sun,
Yong Cai,
Guohao Yu,
Zhili Zhang,
Jinfeng Zhang,
Yang Shangguan,
Lin Jin,
Xinxing Li,
Baoshun Zhang,
V. V. Popov
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5129381
Subject(s) - terahertz radiation , transistor , optoelectronics , wide bandgap semiconductor , electron mobility , terminal (telecommunication) , electron , detector , materials science , high electron mobility transistor , physics , telecommunications , optics , computer science , voltage , quantum mechanics
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