Open AccessInvestigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures
Author(s) -
Yachao Zhang,
Zhizhe Wang,
Shenglei Zhao,
Shengrui Xu,
Jincheng Zhang,
Yue Hao
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5129112
Subject(s) - materials science , optoelectronics , heterojunction , schottky barrier , wide bandgap semiconductor , anode , diode , work function , nitride , schottky diode , nanotechnology , layer (electronics) , electrode , chemistry
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