Open AccessInvestigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
Author(s) -
Wan Ho Choi,
Minjung Kim,
Woojin Jeon,
JinSeong Park
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5126151
Subject(s) - thin film transistor , materials science , optoelectronics , subthreshold swing , dielectric , high κ dielectric , transistor , atomic layer deposition , insulator (electricity) , deposition (geology) , layer (electronics) , voltage , threshold voltage , electrical engineering , nanotechnology , engineering , paleontology , sediment , biology
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