Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy | Zendy

Antonio B. Mei | Zendy; Sahar Saremi | Zendy; Ludi Miao | Zendy; Matthew R. Barone | Zendy; Yongjian Tang | Zendy; Cyrus Zeledon | Zendy; J. Schubert | Zendy; Daniel C. Ralph | Zendy; Lane W. Martin | Zendy; Darrell G. Schlom | Zendy

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Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy

Author(s) -

Antonio B. Mei,

Sahar Saremi,

Ludi Miao,

Matthew R. Barone,

Yongjian Tang,

Cyrus Zeledon,

J. Schubert,

Daniel C. Ralph,

Lane W. Martin,

Darrell G. Schlom

Publication year - 2019

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.5125809

Subject(s) - materials science , bismuth ferrite , molecular beam epitaxy , ferroelectricity , bismuth , irradiation , epitaxy , optoelectronics , ion , adsorption , ferrite (magnet) , layer (electronics) , nanotechnology , composite material , chemistry , metallurgy , multiferroics , dielectric , organic chemistry , physics , nuclear physics

We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2−xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics.

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