Resistive switching in a LaMnO3 + δ/TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy | Zendy

Benjamin Meunier | Zendy; E. Martínez | Zendy; Raquel Rodríguez-Lamas | Zendy; Dolors Pla | Zendy; Mónica Burriel | Zendy; Michel Boudard | Zendy; Carmen Jiménez | Zendy; JeanPascal Rueff | Zendy; O. Renault | Zendy

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Resistive switching in a LaMnO3 + δ/TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy

Author(s) -

Benjamin Meunier,

E. Martínez,

Raquel Rodríguez-Lamas,

Dolors Pla,

Mónica Burriel,

Michel Boudard,

Carmen Jiménez,

JeanPascal Rueff,

O. Renault

Publication year - 2019

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.5125420

Subject(s) - tin , x ray photoelectron spectroscopy , resistive random access memory , materials science , valence (chemistry) , oxygen , electrode , resistive touchscreen , photoemission spectroscopy , auger electron spectroscopy , analytical chemistry (journal) , chemical physics , chemistry , chemical engineering , metallurgy , electrical engineering , organic chemistry , chromatography , nuclear physics , engineering , physics

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