Open AccessEffect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate
Author(s) -
Sang Jae Lee,
Min Ju Kim,
Tae Yoon Lee,
Tae In Lee,
Jae Hoon Bong,
Sung Won Shin,
Seong Ho Kim,
Wan Sik Hwang,
Byung Jin Cho
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5124402
Subject(s) - ferroelectricity , materials science , annealing (glass) , crystallization , dielectric , layer (electronics) , substrate (aquarium) , phase (matter) , polarization (electrochemistry) , optoelectronics , crystallography , analytical chemistry (journal) , chemical engineering , nanotechnology , composite material , chemistry , oceanography , organic chemistry , chromatography , geology , engineering
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