Open AccessEpitaxial κ-(AlxGa1−x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD
Author(s) -
Philipp Storm,
Max Kneiß,
Anna Hassa,
Thorsten Schultz,
Daniel Splith,
Holger von Wenckstern,
Norbert Koch,
Michael Lorenz,
Marius Grundmann
Publication year - 2019
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5124231
Subject(s) - materials science , thin film , pulsed laser deposition , sapphire , tin , lattice constant , epitaxy , band gap , heterojunction , analytical chemistry (journal) , alloy , crystallization , x ray crystallography , phase (matter) , diffraction , crystallography , optoelectronics , nanotechnology , chemical engineering , optics , laser , metallurgy , chemistry , physics , engineering , organic chemistry , layer (electronics) , chromatography
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