Open AccessNew insights into the thermally activated defects in n-type float-zone silicon
Author(s) -
Yan Zhu,
Fiacre Rougieux,
Nicholas E. Grant,
Jack Mullins,
Joyce Ann T. De Guzman,
John D. Murphy,
В. П. Маркевич,
Gianluca Coletti,
А. R. Peaker,
Ziv Hameiri
Publication year - 2019
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.5123901
Subject(s) - silicon , deep level transient spectroscopy , annealing (glass) , materials science , float (project management) , spectroscopy , crystallographic defect , optoelectronics , recombination , carrier lifetime , molecular physics , crystallography , composite material , chemistry , engineering , physics , biochemistry , quantum mechanics , marine engineering , gene
Float-zone silicon has been long assumed to be bulk defect free and stable. Nevertheless, recently it was found that upon annealing between 450 °C to 700 °C detrimental defects can be activated in this material. Previous studies via deep level transient spectroscopy have identified several defect levels. However, it is still not clear which of these levels have a substantial impact on the minority carrier lifetime. In this study, we determine the recombination parameters of the dominant defect level using a combination of deep level transient spectroscopy and temperature and injection dependent lifetime spectroscopy. Additionally, we investigated the effect of hydrogenation on the thermally activated defects in ntype float-zone silicon. © 2019 American Institute of Physics Inc. All rights reserved.
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