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Hydrogenation of dislocations in p-type cast-mono silicon
Author(s) -
Aref Samadi,
Chandany Sen,
Shaoyang Liu,
Utkarshaa Varshney,
Daniel Chen,
Moonyong Kim,
Arman Mahboubi Soufiani,
Michelle VaqueiroContreras,
Chee Mun Chong,
Alison Ciesla,
Malcolm Abbott,
Catherine Chan
Publication year - 2019
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.5123894
Subject(s) - monocrystalline silicon , wafer , silicon , materials science , passivation , dislocation , carrier lifetime , optoelectronics , crystalline silicon , work (physics) , engineering physics , composite material , mechanical engineering , layer (electronics) , engineering

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