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Improved passivation for SHJ utilizing dual intrinsic a-Si:H layers on an inline PECVD tool
Author(s) -
Lara Bodlak,
Jan Temmler,
Anamaria Moldovan,
J. Rentsch
Publication year - 2019
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.5123850
Subject(s) - passivation , materials science , plasma enhanced chemical vapor deposition , silicon , optoelectronics , amorphous silicon , epitaxy , doping , layer (electronics) , heterojunction , chemical vapor deposition , substrate (aquarium) , carrier lifetime , nanotechnology , crystalline silicon , oceanography , geology

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