Open AccessCharacterization of absorption losses in rear side n-type polycrystalline silicon passivating contacts
Author(s) -
Meriç Fırat,
María Recamán Payo,
Filip Duerinckx,
J.R.M. Luchies,
Martijn Lenes,
Jef Poortmans
Publication year - 2019
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.5123831
Subject(s) - passivation , materials science , polycrystalline silicon , silicon , doping , free carrier absorption , optoelectronics , absorption (acoustics) , open circuit voltage , crystalline silicon , carrier lifetime , current density , work function , layer (electronics) , voltage , thin film transistor , electrical engineering , nanotechnology , composite material , engineering , physics , quantum mechanics
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