Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors | Zendy

Jun Lu | Zendy; JrTai Chen | Zendy; Martin Dahlqvist | Zendy; Riad Kabouche | Zendy; Farid Medjdoub | Zendy; Johanna Rosén | Zendy; Olof Kordina | Zendy; Lars Hultman | Zendy

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Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

Author(s) -

Jun Lu,

JrTai Chen,

Martin Dahlqvist,

Riad Kabouche,

Farid Medjdoub,

Johanna Rosén,

Olof Kordina,

Lars Hultman

Publication year - 2019

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.5123374

Subject(s) - materials science , epitaxy , nucleation , heterojunction , chemical vapor deposition , optoelectronics , grain boundary , wide bandgap semiconductor , semiconductor , condensed matter physics , thin film , crystallography , nanotechnology , layer (electronics) , chemistry , composite material , microstructure , physics , organic chemistry

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