Open AccessSuppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate
Author(s) -
Dario Pagnano,
Giorgia Longobardi,
Florin Udrea,
Sun Jin-ming,
Reenu Garg,
H. Kim,
Clemens Ostermaier,
Mohamed A. Imam,
Alain Charles
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5121637
Subject(s) - optoelectronics , materials science , substrate (aquarium) , miniaturization , transistor , coupling (piping) , substrate coupling , high electron mobility transistor , electrical engineering , voltage , layer (electronics) , nanotechnology , engineering , oceanography , trench , geology , metallurgy
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