Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers | Zendy

T. Haffner | Zendy; Mohamed Aymen Mahjoub | Zendy; S. Labau | Zendy; J. Aubin | Zendy; JeanMichel Hartmann | Zendy; G. Ghibaudo | Zendy; Sylvain David | Zendy; B. Pelissier | Zendy; F. Bassani | Zendy; B. Salem | Zendy

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Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers

Author(s) -

T. Haffner,

Mohamed Aymen Mahjoub,

S. Labau,

J. Aubin,

JeanMichel Hartmann,

G. Ghibaudo,

Sylvain David,

B. Pelissier,

F. Bassani,

B. Salem

Publication year - 2019

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.5121474

Subject(s) - materials science , capacitor , x ray photoelectron spectroscopy , germanium , tin , optoelectronics , stack (abstract data type) , equivalent oxide thickness , oxide , high κ dielectric , layer (electronics) , atomic layer deposition , cmos , analytical chemistry (journal) , dielectric , silicon , nanotechnology , transistor , gate oxide , electrical engineering , voltage , chemical engineering , chemistry , metallurgy , computer science , chromatography , programming language , engineering

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