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We establish the relationships between growth conditions, strain state, optical and structural properties of nonpolar m-plane (101¯0) InGaN with indium composition up to 39% grown by plasma-assisted molecular beam epitaxy. We find that indium mole fraction as a function of growth temperature can be explained by an Arrhenius dependence of InN decomposition only for high temperature and low indium composition InGaN films. For the samples following the Arrhenius behavior, we estimate the effective activation energy for InN thermal decomposition in m-plane InGaN to be about 1 eV. This value is approximately a factor of two smaller than that reported for c-plane InGaN films. At low growth temperatures, InGaN layers show less efficient indium incorporation than predicted by Arrhenius behavior. We attribute the lower than expected indium composition at low temperatures to the strain-induced compositional pulling effect. We demonstrate that at 540 °C, the increase in the InGaN layer thickness leads to a preferential strain relaxation along the a-direction and an increase in the indium composition. For the indium mole fraction up to x ∼ 0.16, 30-nm-thick m-plane InGaN layers can be coherently grown on GaN with smooth morphology and pronounced low-temperature photoluminescence indicating that the material quality is suitable for device applications.

Impact of growth conditions and strain on indium incorporation in non-polar m-plane (101¯) InGaN grown by plasma-assisted molecular beam epitaxy