Open AccessOn the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire
Author(s) -
T. C.,
Xuanhu Chen,
Yue Kuang,
Li Li,
J. Li,
Felipe Kremer,
Fangfang Ren,
Shulin Gu,
R. Zhang,
Yi Zheng,
Hark Hoe Tan,
C. Jagadish,
Jiandong Ye
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5120554
Subject(s) - sapphire , dislocation , materials science , annihilation , epitaxy , condensed matter physics , coalescence (physics) , crystallography , transmission electron microscopy , diffraction , optoelectronics , optics , layer (electronics) , composite material , physics , nanotechnology , chemistry , laser , quantum mechanics , astrobiology
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