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III-V-on-Si photonic integrated circuits realized using micro-transfer-printing
Author(s) -
Jing Zhang,
Grigorij Muliuk,
Joan Juvert,
Sulakshna Kumari,
Jeroen Goyvaerts,
Bahawal Haq,
Camiel Op de Beeck,
Bart Kuyken,
Geert Morthier,
Dries Van Thourhout,
Roel Baets,
Guy Lepage,
Peter Verheyen,
Joris Van Campenhout,
Agnieszka Gocalińska,
James O’Callaghan,
E. Pelucchi,
Kevin Thomas,
Brian Corbett,
António José Trindade,
Günther Roelkens
Publication year - 2019
Publication title -
apl photonics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.094
H-Index - 34
ISSN - 2378-0967
DOI - 10.1063/1.5120004
Subject(s) - transfer printing , photonics , realization (probability) , photonic integrated circuit , silicon photonics , integrated circuit , materials science , polydimethylsiloxane , nanotechnology , massively parallel , electronic circuit , wafer , optoelectronics , laser , computer science , electronic engineering , electrical engineering , engineering , physics , optics , composite material , parallel computing , statistics , mathematics
Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows for complex and powerful PICs. Nevertheless, laser source integration technologies are not yet as mature, hampering the further cost reduction of the eventual Si photonic systems-on-chip and impeding the expansion of this platform to a broader range of applications. Here, we discuss a promising technology, micro-transfer-printing (μTP), for the realization of III-V-on-Si PICs. By employing a polydimethylsiloxane elastomeric stamp, the integration of III-V devices can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs. This paper summarizes some of the recent developments in the use of μTP technology for realizing the integration of III-V photodiodes and lasers on Si PICs.

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