Open AccessImproved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric
Author(s) -
Jiyue Zou,
Lisheng Wang,
Fengxiang Chen
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5119913
Subject(s) - passivation , materials science , dielectric , molybdenum disulfide , gate dielectric , optoelectronics , transistor , field effect transistor , field effect , subthreshold swing , layer (electronics) , nanotechnology , electrical engineering , composite material , voltage , engineering
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