Open AccessLow frequency noise and trap density in GaN/AlGaN field effect transistors
Author(s) -
Pavlo Sai,
Justinas Jorudas,
Maksym Dub,
M. Sakowicz,
Vytautas Jakštas,
Dmytro B. But,
P. Prystawko,
G. Cywiński,
Irmantas Kašalynas,
W. Knap,
Sergey Rumyantsev
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5119227
Subject(s) - materials science , optoelectronics , figure of merit , noise (video) , trap (plumbing) , transistor , wafer , electroluminescence , field effect transistor , infrasound , dielectric , nanotechnology , voltage , electrical engineering , physics , layer (electronics) , artificial intelligence , meteorology , computer science , acoustics , image (mathematics) , engineering
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