Open AccessHigh TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors
Author(s) -
Zicong Lei,
Shaohua Yan,
Zhiqiang Cao,
Zongxia Guo,
Panshen Song,
You Qiang,
Jun Wang,
Weisheng Zhao,
Qunwen Leng
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5117320
Subject(s) - perpendicular , materials science , magnetoresistance , condensed matter physics , tunnel magnetoresistance , quantum tunnelling , magnetic field , annealing (glass) , magnetic anisotropy , wafer , layer (electronics) , antiferromagnetism , nuclear magnetic resonance , magnetization , composite material , optoelectronics , physics , geometry , mathematics , quantum mechanics
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