Open AccessComparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
Author(s) -
Ajay Kumar Visvkarma,
Chandan Sharma,
Robert Laishram,
Sonalee Kapoor,
D. S. Rawal,
Seema Vinayak,
Manoj Saxena
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5116356
Subject(s) - materials science , optoelectronics , schottky diode , diode , high electron mobility transistor , schottky barrier , heterojunction , capacitance , subthreshold slope , transistor , threshold voltage , work function , wide bandgap semiconductor , voltage , metal , electrical engineering , chemistry , electrode , metallurgy , engineering
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