Open AccessInternal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
Author(s) -
J. Brault,
Samuel Matta,
Thien H. Ngo,
Mohamed Al Khalfioui,
Pierre Valvin,
M. Leroux,
B. Damilano,
M. Korytov,
Virginie Brändli,
P. Vennéguès,
J. Massies,
Bernard Gil
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5115593
Subject(s) - photoluminescence , quantum dot , molecular beam epitaxy , quantum efficiency , cladding (metalworking) , materials science , optoelectronics , band gap , wavelength , analytical chemistry (journal) , chemistry , epitaxy , nanotechnology , layer (electronics) , chromatography , metallurgy
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