Open AccessReducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
Author(s) -
Abinaya Krishnaraja,
Johannes Svensson,
Erik Lind,
LarsErik Wernersson
Publication year - 2019
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5115296
Subject(s) - ambipolar diffusion , optoelectronics , quantum tunnelling , nanowire , thermionic emission , materials science , tunnel field effect transistor , subthreshold slope , drain induced barrier lowering , cmos , leakage (economics) , transistor , subthreshold swing , field effect transistor , electrical engineering , physics , voltage , electron , quantum mechanics , economics , macroeconomics , engineering
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