Toward CMOS like devices from two-dimensional channel materials
Author(s) -
Peng Wu,
Joerg Appenzeller
Publication year - 2019
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5115147
Subject(s) - transistor , cmos , materials science , scaling , field effect transistor , inverter , schottky diode , channel (broadcasting) , electronic engineering , black phosphorus , schottky barrier , computer science , optoelectronics , electrical engineering , nanotechnology , engineering physics , voltage , engineering , diode , geometry , mathematics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom