Open AccessEvidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET
Author(s) -
D. Dutta,
Daiana De,
Daniel Fan,
S. Roy,
Giovanni Alfieri,
Massimo Camarda,
Maximilian Amsler,
J. Lehmann,
Holger Bartolf,
Stefan Goedecker,
Thomas A. Jung
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5112779
Subject(s) - materials science , nucleation , mosfet , carbon fibers , electronic structure , amorphous solid , thermal , chemical physics , optoelectronics , condensed matter physics , crystallography , chemistry , transistor , thermodynamics , composite material , electrical engineering , physics , organic chemistry , voltage , composite number , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom