Open AccessEnergy-band alignments at ZnO/Ga2O3 and Ta2O5/Ga2O3 heterointerfaces by X-ray photoelectron spectroscopy and electron affinity rule
Author(s) -
Zeng Liu,
Yuanyuan Liu,
Xia Wang,
Wanjun Li,
Yusong Zhi,
Xiaolong Wang,
Peigang Li,
Weihua Tang
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5112067
Subject(s) - heterojunction , band offset , x ray photoelectron spectroscopy , band gap , materials science , optoelectronics , wide bandgap semiconductor , electronic band structure , semiconductor , direct and indirect band gaps , oxide , semimetal , valence band , condensed matter physics , physics , nuclear magnetic resonance , metallurgy
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