English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

This paper explores the concept of an analog memristive device based on reversible electrochemical deposition and deplating of a submonolayer metal layer on a 108 Ω resistive bar. Initial feasibility experiments demonstrate a continuous resistance change by seven orders of magnitude during physical vapor deposition of Cu on TaNx/SOI, with the most promising range from 5.6 × 107 to 1.1 × 107 Ω/□ during a 0.64 monolayer Cu deposition. Cyclic electrochemical deposition and deplating of Cu on a metal seed on SiO2 in a 0.01M CuSO4/H2SO4 pH 1.4 solution demonstrates a reversible resistance variation with a minimum of 10 ± 1 discrete resistance states. These initial results are promising but also reveal a key materials challenge: the need for controlled and reversible electrochemical deposition/deplating of a submonolayer metal on the surface of a relatively high resistivity (≥10−2 Ω m) material.This paper explores the concept of an analog memristive device based on reversible electrochemical deposition and deplating of a submonolayer metal layer on a 108 Ω resistive bar. Initial feasibility experiments demonstrate a continuous resistance change by seven orders of magnitude during physical vapor deposition of Cu on TaNx/SOI, with the most promising range from 5.6 × 107 to 1.1 × 107 Ω/□ during a 0.64 monolayer Cu deposition. Cyclic electrochemical deposition and deplating of Cu on a metal seed on SiO2 in a 0.01M CuSO4/H2SO4 pH 1.4 solution demonstrates a reversible resistance variation with a minimum of 10 ± 1 discrete resistance states. These initial results are promising but also reveal a key materials challenge: the need for controlled and reversible electrochemical deposition/deplating of a submonolayer metal on the surface of a relatively high resistivity (≥10−2 Ω m) material.

Electrochemical memristive devices based on submonolayer metal deposition