Open AccessValence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
Author(s) -
Chaker Fares,
Max Kneiß,
Holger von Wenckstern,
Marius Grundmann,
Marko J. Tadjer,
F. Ren,
E. S. Lambers,
S. J. Pearton
Publication year - 2019
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5110498
Subject(s) - materials science , atomic layer deposition , heterojunction , band gap , optoelectronics , valence band , pulsed laser deposition , valence (chemistry) , wide bandgap semiconductor , photodetector , semimetal , thin film , nanotechnology , chemistry , organic chemistry
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