Open AccessDefects at the surface of β-Ga2O3 produced by Ar plasma exposure
Author(s) -
A. Y. Polyakov,
InHwan Lee,
N. B. Smirnov,
E. B. Yakimov,
Ivan Shchemerov,
А. В. Черных,
А. I. Kochkova,
A.A. Vasil'ev,
Patrick H. Carey,
F. Ren,
David J. Smith,
S. J. Pearton
Publication year - 2019
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5109025
Subject(s) - materials science , schottky diode , analytical chemistry (journal) , plasma , diode , epitaxy , inductively coupled plasma , schottky barrier , optoelectronics , layer (electronics) , chemistry , nanotechnology , physics , chromatography , quantum mechanics
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